2001. 12. 28 1/6 semiconductor technical data KTC3880S epitaxial planar npn transistor revision no : 4 high frequency low noise amplifier application. vhf band amplifier application. features small reverse transfer capacitance : c re =0.7pf(typ.) low noise figure : nf=2.5db(typ.) (f=100mhz). maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) note : h fe classification r:40 80, o:70 140, y:100 200 h rank type name marking lot no. aq fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =18v, i e =0 - - 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.5 a dc current gain h fe (note) v ce =6v, i c =1ma 40 - 200 reverse transfer capacitance c re v cb =6v, f=1mhz, i e =0 - 0.7 - pf transition frequency f t v ce =6v, i c =1ma 300 550 - mhz collector-base time constant c c rbb ? v cb =6v, i e =-1ma, f=30mhz - - 30 ps noise figure nf v cc =6v, i e =-1ma, f=100mhz (fig.) - 2.5 5.0 db power gain g pe 15 18 - characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 20 ma emitter current i e -20 ma collector power dissipation p c 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
2001. 12. 28 2/6 KTC3880S revision no : 4 input r =50 ? g 0.01 f 2.2k ? 0.01 f 1k ? -v (i =-1ma) e 15pf cc v 0.02 f output r =50 ? l 0.02 f e 1000pf 1000pf l1 6pf l1 : 0.8mm silver plated copper wire, 4turns. 10mm id, 8mm len g th. dut y parameters (typ.) (1) common emitter (v ce =6v, i e =-1ma, f=100mhz) (2) common base (v ce =6v, i e =-1ma, f=100mhz) characteristic symbol typ. unit input conductance g ie 2.9 ms input capacitance c ie 10.2 pf reverse transfer admittance |y re | 0.33 s phase angle of reverse transfer admittance re -90 . forward transfer admittance |y fe | 40 ms phase angle of forward transfer admittance fe -20 . output conductance g oe 45 s output capacitance c oe 1.1 pf characteristic symbol typ. unit input conductance g ib 34 ms input capacitance c ib -10 pf reverse transfer admittance |y rb | 0.27 s phase angle of reverse transfer admittance rb -105 . forward transfer admittance |y fb | 34 ms phase angle of forward transfer admittance fb 165 . output conductance g ob 45 s output capacitance c ob 1.1 pf fig. g pe test circuit
2001. 12. 28 3/6 KTC3880S revision no : 4 0.1 0.05 -10 -3 -0.5 -0.2 emitter current i (ma) e -1 common emitter v =6v f=100mhz ta=25 c ce -5 0.3 0.5 1 3 -300 -50 -100 y re re e fe y , - i re y (ms) reverse transfer admittance phase angle of reverse transfer re re admittance ( ) 10 5 -10 -3 -0.5 -0.2 -1 common emitter v =6v f=100mhz ta=25 c ce -5 30 50 100 300 1 -10 -3 -0.5 -0.2 emitter current i (ma) e -1 common emitter v =6v f=100mhz ta=25 c ce v =6v ce v =6v ce -5 3 5 10 30 c g ie g oe c oe ie common emitter v =6v ta=25 c ce e ie ie c , g - i input capacitance c (pf) ie input conductance g (ms) ie 4 collector current 0 c 400 600 base current b static characteristics 10 dc current gain h fe 1 0.1 0.3 0.5 collector current i (ma) c h - i 8 12 16 20 200 0 10 20 30 0.8 0.6 0.4 0.2 i (ma) voltage v (v) base-emitter be i ( a) voltage v (v) collector-emitter ce i =50 a b 100 150 200 250 300 350 400 450 500 0 common emitter ta=25 c fe c 3 5 10 20 30 50 100 300 emitter current i (ma) e e oe oe c , g - i ouput capacitance c (pf) oe ouput conductance g ( s) oe 1 0.5 3 5 10 30
2001. 12. 28 4/6 KTC3880S revision no : 4 100 50 30 -5 -1 e emitter current i (ma) -0.2 -0.5 -3 -10 5 10 -10 -5 -30 -50 -100 rb rb y 1 0.5 0.3 -5 cb ta=25 c f=100mhz v =6v common base -1 e emitter current i (ma) -0.2 -0.5 -3 -10 0.05 0.1 -100 -50 -300 -500 -1k e rb rb y , - i y (ms) reverse transfer admittance phase angle of forward transfer rb rb admittance ( ) fe fe y 100 50 30 -5 ce ta=25 c f=100mhz v =6v common base -1 y (ms) forward transfer admittance fe fe e emitter current i (ma) -0.2 -0.5 -3 -10 5 10 -10 -5 -30 -50 -100 cb ta=25 c f=100mhz v =6v common base e fe fe y , - i phase angle of forward transfer admittance ( ) fb fb y 100 50 30 -5 cb ta=25 c f=100mhz v =6v common base -1 y (ms) forward transfer admittance fb fb e emitter current i (ma) -0.2 -0.5 -3 -10 5 10 100 50 300 500 1k e fb fb y , - i phase angle of forward transfer admittance ( ) ce ie ie c , g - v e ib ib c , g - i input capacitance c (pf) ib input capacitance c (pf) ie input conductance g (ms) ie input conductance g (ms) ib 10 5 -10 -3 -0.5 -0.2 -1 common emitter v =6v f=100mhz ta=25 c cb -5 30 50 100 200 1 0.5 3 5 10 20 g ob c ob c ie g ie c ib g ib emitter current i (ma) e e ob ob c , g - i ouput capacitance c (pf) ob ouput conductance g ( s) ob e ta=25 c f=100mhz i =-1ma common base ce collector-base voltage v (v) 30 10 5 13 1 3 5 10 20
2001. 12. 28 5/6 KTC3880S revision no : 4 10 5 30 50 100 300 g ob c ob cb ib ib c , g - v input capacitance c (pf) ib input conductance g (ms) ib 1 0.5 0.3 30 5 y (ms) reverse transfer admittance re re ce collector-emitter voltage v (v) 1310 0.05 0.1 common emitter i =-1ma f=100mhz ta=25 c e y re re 100 50 300 -100 -5 -10 fe fe y e ta=25 c f=100mhz i =-1ma common emitter 10 5 10 3 1 collector-emitter voltage v (v) ce collector-emitter voltage v (v) ce fe forward transfer admittance y (ms) 530 30 50 100 -30 -50 -100 -5 -10 -30 -50 ce re re y , - v ce fe y , - v fe phase angle of reverse transfer admittance ( ) phase angle of forward transfer fe admittance ( ) 30 5 1310 100 50 30 30 5 1310 5 10 cb ob ob c , g - v ouput capacitance c (pf) ob ouput conductance g ( s) ob 1 0.5 3 5 10 30 cb collector-base voltage v (v) 100 50 30 5 10 1 0.5 3 5 10 ce oe oe c , g - v output capacitance c (pf) oe iouut conductance g ( s) oe c oe c ib g ib g oe e 30 10 30 10 1 collector-base voltage v (v) cb collector-base voltage v (v) cb 3 common base i =-1ma f=100mhz ta=25 c e 50 100 300 y fb fb 5 100 300 cb fb fb y , - v y (ms) forward transfer admittance phase angle of forward transfer fb fb admittance ( ) common base i =-1ma f=100mhz ta=25 c e common base i =-1ma f=100mhz ta=25 c e 10 3 15 30 ta=25 c f=100mhz i =-1ma common emitter
2001. 12. 28 6/6 KTC3880S revision no : 4 y - f re re reverse transfer conductance g ( s) -200 -800 b ( s) re reverse transfer susceptance -160 -120 -80 -40 0 -600 -400 -200 0 -300 -50 e ta=25 c f=100mhz i =-1ma common base cb collector-base voltage v (v) -100 0 0 input susceptance b (ms) ie input conductance g (ms) ie 5 1015202530 4 8 12 16 20 common emitter v =6v ta=25 c ce e i =-1ma f=200mhz 150 100 50 27 10.7 10.7 27 50 100 150 f=200mhz i =-1ma e ce ta=25 c v =6v common emitter 2000 1600 1200 800 400 120 100 80 60 40 20 oe output conductance g ( s) oe output susceptance b ( s) 0 0 27 50 100 150 200 f=10.7mhz e common emitter v =6v i =-1ma ta=25 c ce 0 -10 -20 -30 50 40 30 20 10 forward transfer susceptance fe b (ms) -40 0 forward transfer conductance g (ms) fe rb rb y y - f ie y - f fe y - f oe cb rb rb y , - v y (ms) reverse transfer admittance phase angle of reverse transfer rb rb admittance ( ) i =-1ma e ce ta=25 c v =6v common emitter 0.05 30 10 5 13 0.1 0.3 0.5 1 2 200 150 27 100 50 f=10.7mhz c p (mw) 0 collector power dissipation 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 150 175 50 100 150 200
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